19.11.2 In the first paragraph of the test specification, add the following after Note 2:
g) failure of an electronic power switching device in a partial turn-on mode with loss of
gate (base) control. During this test, winding temperatures shall not exceed the values
given in 19.7.
NOTE 3 This mode may be simulated by disconnecting the electronic power switching device gate (base)
terminal and connecting an external adjustable power supply between the gate (base) terminal and the source
(emitter) terminal of the electronic power switching device. The power supply is then varied so as to achieve a
current that will not damage the electronic power switching device but give the most onerous conditions of test.
NOTE 4 Examples of electronic power switching devices are field effect transistors (FET’s and MOSFET’s) and
bipolar transistors (including IGBT’s).