求助(IEC 60335-1 １９章电子失效的实际操作方法)

zjh407

如何对MOS 做IEC 60335-1 A2 cl 19.11.2 g)的测试？


节示标准如下：

19.11.2 g) failure of an electronic power switching device in a partial turn-on mode with loss of gate (base) control. During this test, winding temperatures shall no exceed the values give in 19.7.

NOTE 3 This mode may be simulated by disconnecting the electronic power switching device gate (base) terminal and connecting an external adjustable power supply between the gate (base ) terminal and the source (emitter) terminal of the electronic power switching device. The power supply is then varied so as to achieve a current that will not damage the electronic power switching device but give the most onerous conditions of test.



标准的意思:

将MOS管的栅级断开再外加电源为MOS管供电，目的是要模拟出既要MOS不烧坏又要出现发热的最严酷的情况。标准上只是说了个原则上是：既要MOS不烧坏又要出现发热的最严酷的情况.

但是实际操作比较困难!

那位大佬有没有比较好的办法分享一下?谢谢!