19.11.2 In the first paragraph of the test specification, add the following after Note 2:
g) failure of an electronic power switching device in a partial turn-on mode with loss of
gate (base) control. During this test, winding temperatures shall not exceed the values
given in 19.7.
NOTE 3 This mode may be simulated by disconnecting the electronic power switching device gate (base)
terminal and connecting an external adjustable power supply between the gate (base) terminal and the source
(emitter) terminal of the electronic power switching device. The power supply is then varied so as to achieve a
current that will not damage the electronic power switching device but give the most onerous conditions of test.
NOTE 4 Examples of electronic power switching devices are field effect transistors (FET’s and MOSFET’s) and
bipolar transistors (including IGBT’s).作者: feazhp 时间: 2011-12-1 12:55
我两年前也接触过此问题的测试，没弄懂其实际操作方法。
现在同问。
A2：2006标准出了几年了，有没有什么决议或者有较实用的测试方法？作者: syyhiw 时间: 2011-12-1 12:55
一般不需要做这测试。作者: fumsga 时间: 2011-12-1 12:55
开关电源作者: magebao 时间: 2011-12-1 12:56
这里的意思是如果类似开关电源电路在335里面需要做这样的异常测试吗？
好像挺模糊的